note: pins 1 & 2 must be electrically connected at the printed circuit board. ds30141 rev. 4 - 3 1 of 3 mbrm5100 www.diodes.com diodes incorporated mbrm5100 5a high voltage schottky barrier rectifier powermite 3 features single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. case: powermite 3 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: see page 3 ordering information: see page 3 weight: 0.072 grams (approximate) mechanical data b c d e g j h k l m a p 12 3 pin 1 pin 2 pin 3, bottomside heat s ink c characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v rms reverse voltage v r(rms) 70 v average rectified output current (see also figure 5) i o 5a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load @t c = 80c i fsm 100 a typical thermal resistance junction to case r jc 1.2 c/w typical thermal resistance junction to soldering point r js 2.7 c/w operating temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c guard ring die construction for transient protection low power loss, high efficiency high reverse breakdown voltage for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications maximum ratings @ t a = 25 c unless otherwise specified electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage (note 1) v (br)r 100 v i r = 0.2ma forward voltage v f 0.75 0.58 0.84 0.67 0.81 0.64 0.90 0.73 v i f = 5a, t j = 25 c i f = 5a, t j = 125 c i f = 10a, t j = 25 c i f = 10a, t j = 125 c peak reverse current (note 1) i r 0.015 2 0.2 100 ma t j = 25 c, v r = 100v t j = 125 c, v r = 100v powermite 3 dim min max a 4.03 4.09 b 6.40 6.61 c .864 .914 d 1.83 nom e 1.10 1.14 g .173 .203 h 5.01 5.17 j 4.37 4.43 k .173 .203 l .71 .77 m .36 .46 p 1.73 1.83 all dimensions in mm notes: 1. short duration test pulse used to minimize self-heating effect. not recommended for new designs use pds5100
ds30141 rev. 4 - 3 2 of 3 mbrm5100 www.diodes.com 100 10 1.0 0.1 0.01 00.2 0.4 0.6 0.8 i , instantaneous forward current (a) f v instantaneous forward voltage (v) f, fi g .1 t y pical forward characteristics t = 100 c j t = 125 c j t=25 c j 10 100 1000 10,000 1.0 0.1 0 20 40 60 100 80 v , instantaneous reverse voltage (v) r fig. 2 typical reverse characteristics t= 125 c j t= 100 c j t= 75 c j t= 25 c j 0 20 40 60 80 100 1 10 100 i , peak f o rward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive peak forward surge current t=80 c c 10 100 1000 0 20 40 60 80 100 c , total capacitance (pf) t v , reverse voltage (v) r fig. 4 typical capacitance vs. reverse volta g e f = 1mhz not recommended for new designs use pds5100
ds30141 rev. 4 - 3 3 of 3 mbrm5100 www.diodes.com 0 1.5 3.0 4.5 7 .5 6.0 0 25 50 75 100 125 150 i , dc forward current (a) f t , ambient temperature (c) a fi g . 5 dc forward current deratin g note 1 note 3 note 2 0 0.5 1.0 1.5 2.5 2.0 3.0 3.5 0 1 3 2 4 5 6 7 p , average forward power dissipation (w ) f(av) i , average forward current (a) f(av) fi g . 6 forward power dissipation note 5 note 4 notes: 1. t a = t soldering point ,r js = 2.7 c/w, r sa = 0 c/w. 2. device mounted on getek substrate, 2x2, 2 oz. copper, double-sided, cathode pad dimensions 0.75 x 1.0, anode pad dimensions 0.25 x 1.0. r ja in range of 20-40c/w. 3. device mounted on fr-4 substrate, 2x2, 2 oz. copper, single-sided, pad layout as per diodes inc. suggest ed pad layout document ap02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. r ja in range of 100-140c/w. 4. maximum power dissipation when the device is mounted in accordance to the conditions described in note 3. 5. maximum power dissipation when the device is mounted in accordance to the conditions described in note 2. mbrm5100 = product type marking code = manufacturers code marking yyww = date code marking yy = last digit of year ex: 02 for 2002 ww=weekcode01to52 (k) = factory designator yyww(k) mbrm5100 marking information notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping mbrm5100-13 powermite 3 5000/tape & reel ordering information (note 6) powermite is a registered trademark of microsemi corporation. not recommended for new designs use pds5100
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